Title :
Doping fluctuation induced performance variation in SiNW biosensors
Author :
Xinrong Yang ; Pengyuan Zang ; Frensley, William ; Dian Zhou ; Hu, Wenfeng
Author_Institution :
Dept. of Electr. Eng., Univ. of Texas at Dallas, Richardson, TX, USA
Abstract :
We analyze the doping fluctuation induced stochastic performance variation in charge based Si nanowire (SiNW) biosensors. We show that for given doping statistics and system topology configuration, electrostatic biasing condition can be tuned to optimize overall sensor sensitivity. Systems that utilize NW arrays may achieve optimal sensitivity at different biasing condition than that for individual NW sensors.
Keywords :
biosensors; chemical sensors; doping; electrostatics; nanobiotechnology; nanosensors; nanowires; silicon; statistical analysis; stochastic processes; Si; charge based silicon nanowire biosensors; doping fluctuation analysis; doping statistics; electrostatic biasing condition; optimization; stochastic performance variation; system topology configuration; Biosensors; Doping; Fluctuations; Ionization; Nanobioscience; Sensitivity; Silicon; Biosensor; Doping fluctuation; Nanowire;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2013 13th IEEE Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-0675-8
DOI :
10.1109/NANO.2013.6720854
