• DocumentCode
    3015475
  • Title

    Transmission efficiency study of grating layer location of a GaN nano-grated structure

  • Author

    Aleman, Gabriela ; Chico, Juliet ; Xiaomin Jin ; Xing-Xing Fu ; Xiang-Ning Kang ; Guo-Yi Zhang

  • Author_Institution
    Electr. Eng. Dept., California Polytech. State Univ., San Luis Obispo, CA, USA
  • fYear
    2013
  • fDate
    5-8 Aug. 2013
  • Firstpage
    862
  • Lastpage
    865
  • Abstract
    This is a study regarding nano-grating structure location of GaN LEDs. A 2D model of a nano-grating GaN LED is developed and used for simulations. The analyses focus on enhancement of light extraction efficiency (LEE) through the surface grating location optimization in relation to the Multi-quantum well (MQW) source region. By studying the effects of source location on the total light transmission across the GaN surface-air interface, we find that, as the location of the grating surface increases, or in other words the distance between the grating surface and the source increases, there is a general improvement in the enhancement of the transmission. However, compared to the non-grating case, some locations can improve the LEE by up to 133%, while the other locations may reduce LEE. We find that optimizing location increases invariance of transmission to the surface grating period.
  • Keywords
    III-V semiconductors; diffraction gratings; gallium compounds; nanophotonics; quantum wells; wide band gap semiconductors; 2D model; GaN; grating layer location; light extraction efficiency; light transmission; multiquantum well source region; nanograting structure location; surface grating location optimization; surface grating period; surface-air interface; transmission efficiency; Educational institutions; Gallium nitride; Gratings; Light emitting diodes; Photonic crystals; Quantum well devices; Surface waves; GaN; LED; Nano-grating; grating location;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology (IEEE-NANO), 2013 13th IEEE Conference on
  • Conference_Location
    Beijing
  • ISSN
    1944-9399
  • Print_ISBN
    978-1-4799-0675-8
  • Type

    conf

  • DOI
    10.1109/NANO.2013.6720856
  • Filename
    6720856