DocumentCode :
3015550
Title :
ErxY2−xSiO5 thin film waveguide for high optical gain per length at 1.53 μm
Author :
Suh, Kiseok ; Lee, Shinyoung ; Chang, Jee Soo ; Kim, Inyong ; Shin, Jung H. ; Lee, Hansuek ; Park, Namkyoo
Author_Institution :
Dept. of Phys., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon
fYear :
2008
fDate :
17-19 Sept. 2008
Firstpage :
338
Lastpage :
340
Abstract :
Ridge-type ErxY2-xSiO5 waveguides were fabricated. Amorphous ErxY2-xSiO5 was deposited using reactive ion beam sputter deposition, and crystallized by high-temperature annealing. The inversion level achieved was 0.4, limited by grain-boundary scattering and multimodedness of waveguide.
Keywords :
annealing; erbium compounds; grain boundaries; integrated optics; optical fabrication; optical waveguides; sputter deposition; yttrium compounds; ErxY2-xSiO5; grain-boundary scattering; high-temperature annealing; inversion level; ion beam sputter deposition; optical gain; thin film waveguide; waveguide fabrication; waveguide multimodedness; wavelength 1.53 mum; Annealing; Erbium; Optical attenuators; Optical films; Optical refraction; Optical scattering; Optical variables control; Optical waveguides; Sputtering; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location :
Cardiff, Wales
Print_ISBN :
978-1-4244-1769-8
Electronic_ISBN :
978-1-4244-1768-1
Type :
conf
DOI :
10.1109/GROUP4.2008.4638192
Filename :
4638192
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3015550
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