Title :
Fabrication and responsivity spectra of p-Ge/i-Si/n-Si near-infrared photodiodes
Author :
Ishikawa, Yasuhiko ; Park, Sungbong ; Osaka, Jiro ; Wada, Kazumi
Author_Institution :
Dept. of Mater. Eng., Univ. of Tokyo, Tokyo
Abstract :
Responsivity spectra are measured for p-Ge/i-Si/n-Si diodes favorable for the high-frequency operation. In spite of thin (90 nm) p-Ge absorption layer, free-space responsivities of ~10 mA/W are obtained, corresponding to the internal quantum efficiency as large as 20%.
Keywords :
elemental semiconductors; germanium; infrared detectors; p-i-n photodiodes; silicon; Ge-Si; absorption layer; internal quantum efficiency; near-infrared photodiodes; responsivity spectra; Absorption; Annealing; Charge carrier processes; Dielectric breakdown; Dielectric constant; Electric breakdown; Electrons; Fabrication; Photodiodes; Semiconductor diodes;
Conference_Titel :
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1769-8
Electronic_ISBN :
978-1-4244-1768-1
DOI :
10.1109/GROUP4.2008.4638193
