Title :
Determination of dynamic parameters for HSPICE IGBT model using curve-fitting optimisation method
Author :
Mariun, N.B. ; Aris, I.B. ; Shepherd, W.
Author_Institution :
Dept. of Electr. & Electron. Eng., Putra Malaysia Univ., Malaysia
Abstract :
The two important characteristics of an IGBT, which should be considered in device modelling, are the conduction (static) and the switching (dynamic) characteristics. The conduction characteristic parameters were discussed previously (Mariun et al, 1997) and here only the dynamic parameters are presented briefly to give background before detailed development of the model is presented. The curve-fitting optimisation method available in HSPICE is used to determine the model parameters and the results are compared with laboratory test results and are found to be in good agreement
Keywords :
SPICE; curve fitting; insulated gate bipolar transistors; optimisation; semiconductor device models; semiconductor device testing; HSPICE; HSPICE IGBT model; IGBT; conduction characteristic parameters; conduction characteristics; curve-fitting optimisation method; device modelling; dynamic characteristics; dynamic parameters; model parameters; static characteristics; switching characteristics; Bridge circuits; Curve fitting; Insulated gate bipolar transistors; MOSFET circuits; Optimization methods; Power MOSFET; Power system modeling; Switching circuits; Tail; Voltage;
Conference_Titel :
Semiconductor Electronics, 1998. Proceedings. ICSE '98. 1998 IEEE International Conference on
Conference_Location :
Bangi
Print_ISBN :
0-7803-4971-7
DOI :
10.1109/SMELEC.1998.781167
