Determination of dynamic parameters for HSPICE IGBT model using curve-fitting optimisation method

Author

Mariun, N.B. ; Aris, I.B. ; Shepherd, W.

Author_Institution

Dept. of Electr. & Electron. Eng., Putra Malaysia Univ., Malaysia

fYear

1998

fDate

1998

Firstpage

138

Lastpage

142

Abstract

The two important characteristics of an IGBT, which should be considered in device modelling, are the conduction (static) and the switching (dynamic) characteristics. The conduction characteristic parameters were discussed previously (Mariun et al, 1997) and here only the dynamic parameters are presented briefly to give background before detailed development of the model is presented. The curve-fitting optimisation method available in HSPICE is used to determine the model parameters and the results are compared with laboratory test results and are found to be in good agreement

Keywords

SPICE; curve fitting; insulated gate bipolar transistors; optimisation; semiconductor device models; semiconductor device testing; HSPICE; HSPICE IGBT model; IGBT; conduction characteristic parameters; conduction characteristics; curve-fitting optimisation method; device modelling; dynamic characteristics; dynamic parameters; model parameters; static characteristics; switching characteristics; Bridge circuits; Curve fitting; Insulated gate bipolar transistors; MOSFET circuits; Optimization methods; Power MOSFET; Power system modeling; Switching circuits; Tail; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 1998. Proceedings. ICSE '98. 1998 IEEE International Conference on

Conference_Location

Bangi

Print_ISBN

0-7803-4971-7

Type

conf

DOI

10.1109/SMELEC.1998.781167

Filename

781167