Title :
Device design, fabrication and characterization of 0.8 μm CMOS technology
Author :
Ting, Toh Hong ; Ahmad, Mohd Rais ; Chye, Roy Kooh Jinn ; Wagiran, Rahman ; Suparjo, Bambang Sunaryo
Author_Institution :
Semicond. Technol. Ctr., Kuala Lumpur, Malaysia
Abstract :
An intensive study has been conducted for the development of the MIMOS 0.8 μm CMOS technology. Issues such as device design and characterization have been given much consideration. NMOS and PMOS transistors have been designed from basic concepts and using simulation tools such as TSUPREM-4 and MEDICI. Device design constraints such as threshold voltage variation, off-state leakage current and drain-induced barrier lowering (DIBL) effects have been seriously examined to improve device performance. Furthermore, performance criteria such as drive current capability have also been examined. Extraction of device characteristics from silicon has been performed on a test chip. Based on experimental results, numerous I-V plots are presented and the data are discussed in terms of output and transfer characteristics and surface DIBL leakage current
Keywords :
CMOS integrated circuits; MOSFET; circuit CAD; circuit simulation; integrated circuit design; integrated circuit manufacture; integrated circuit testing; leakage currents; software tools; 0.8 micron; CMOS technology; I-V plots; MEDICI; NMOS transistors; PMOS transistors; TSUPREM-4; device characteristics; device characterization; device design; device design constraints; device fabrication; device performance; drain-induced barrier lowering; drive current capability; off-state leakage current; output characteristics; performance criteria; simulation tools; surface DIBL leakage current; test chip; threshold voltage variation; transfer characteristics; CMOS technology; Data mining; Fabrication; Leakage current; MIMO; MOS devices; MOSFETs; Medical simulation; Silicon; Threshold voltage;
Conference_Titel :
Semiconductor Electronics, 1998. Proceedings. ICSE '98. 1998 IEEE International Conference on
Conference_Location :
Bangi
Print_ISBN :
0-7803-4971-7
DOI :
10.1109/SMELEC.1998.781169
