Title :
High efficiency monolithic GaAs/Si tandem solar cells grown by MOCVD
Author :
Yang, Ming-Ju ; Soga, Tetsuo ; Jimbo, Takashi ; Umeno, Masayoshi
Author_Institution :
Dept. of Electr. & Comput. Eng., Nagoya Inst. of Technol., Japan
Abstract :
A monolithic high-efficiency GaAs/Si cascade solar cell fabricated by MOCVD is demonstrated. It consists of the GaAs top cell and the Si bottom cell. Using a buffer layer of Al0.3Ga0.7As, the conversion efficiency of the GaAs top cell is decreased from 15.1% from 14.2%, but it makes the efficiency of the Si bottom cell increased from 4.3% to 5.3%. The theoretical analyses of the Si bottom cell are carried out. The suitable resistivity of p-Si substrate for the Si bottom cell is founded to be 10 Ω·cm, which corresponded with the experimental results. The total conversion efficiency of the GaAs/Si tandem solar cell is 19.5% (1 sun, AM0) which has been achieved in a three-terminal configuration
Keywords :
CVD coatings; III-V semiconductors; chemical vapour deposition; elemental semiconductors; gallium arsenide; semiconductor device models; semiconductor device testing; silicon; solar cells; 10 ohmcm; 14.2 percent; 15.1 percent; 19.5 percent; 4.3 percent; 5.3 percent; Al0.3Ga0.7As; GaAs-Si; MOCVD growth; buffer layer; conversion efficiency; monolithic GaAs/Si tandem solar cells; semiconductor; theoretical analyses; three-terminal configuration; Buffer layers; Conductivity; Gallium arsenide; Gold; MOCVD; Photovoltaic cells; Photovoltaic systems; Solar power generation; Substrates; Temperature;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520725
