• DocumentCode
    3015725
  • Title

    High Quality Factor with Fundamental Resonant Mode near the Bandedge of GaN Triangular Submicron Laser Cavity

  • Author

    Lai, C.M. ; Wu, H.-M. ; Huang, P.-C. ; Yeh, B.-C. ; Chou, C.-L. ; Peng, L.-H.

  • Author_Institution
    Ming Chuan Univ., Taoyuan
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Optically-pumped, single-mode stimulated emission was observed on GaN triangular submicron-cavity bounded by {10-10} facets. FDTD analysis indicates a high-Q factor (103) resultant from material´s dispersion effect near the bandedge.
  • Keywords
    III-V semiconductors; Q-factor; gallium compounds; laser cavity resonators; optical pumping; stimulated emission; wide band gap semiconductors; GaN; finite difference time-domain analysis; fundamental resonant mode; optical pumping; quality factor; stimulated emission; triangular submicron laser cavity; Dispersion; Finite difference methods; Gallium nitride; Laser modes; Photonic band gap; Photonic crystals; Q factor; Resonance; Stimulated emission; Time domain analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/CLEO.2007.4453200
  • Filename
    4453200
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3015725