Title :
Effect of gas switching on InP/InGaAs interfaces during CBE growth
Author :
Thomas, S. ; Kuo, H.C. ; Curtis, A.P. ; Wu, W. ; Tucker, J.R. ; Stillman, G.E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
In this paper, the effect of a simple gas switching sequence on interface abruptness during CBE growth is studied using double crystal X-ray diffraction (DCXRD), photoluminescence (PL), and scanning tunneling microscopy (STM). Optimization of the switching sequence produces monolayer abruptness for both the InP/InGaAs and the InGaAs/InP interfaces
Keywords :
III-V semiconductors; X-ray diffraction; chemical beam epitaxial growth; gallium arsenide; indium compounds; interface structure; photoluminescence; scanning tunnelling microscopy; semiconductor epitaxial layers; semiconductor growth; CBE growth; InP-InGaAs; double crystal X-ray diffraction; gas switching; interface abruptness; photoluminescence; scanning tunneling microscopy; Degradation; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Optical devices; Optical pumping; Optical scattering; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600140
