Title :
A fully differential low-power high-linearity 77-GHz SiGe receiver frontend for automotive radar systems
Author :
Kissinger, Dietmar ; Sewiolo, Benjamin ; Forstner, Hans-Peter ; Maurer, Linus ; Weigel, Robert
Author_Institution :
Inst. for Electron. Eng., Univ. of Erlangen-Nuremberg, Erlangen, Germany
Abstract :
This paper presents a single-chip receiver frontend consisting of a low-noise amplifier and an active downconversion mixer, intended for application in automotive radar systems at 77 GHz. The circuit has been implemented in a SiGe:C HBT technology with ft/fmax = 200/250 GHz and can operate either fully differential or in single-ended mode. The receiver frontend shows a conversion gain of 24 dB and a single sideband noise figure of 14 dB when driven single-ended. Linearity measurements show a 1 dB input referred compression point of -10 dBm. The circuit draws 40 mA from a 3.3 V supply and occupies a chip area of 728 times 1028 mum2 including bond pads.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; low noise amplifiers; millimetre wave receivers; mixers (circuits); radar receivers; road vehicle radar; semiconductor materials; HBT technology; SiGe; active downconversion mixer; automotive radar systems; compression point; current 40 mA; differential low-power high-linearity receiver frontend; frequency 200 GHz; frequency 250 GHz; frequency 77 GHz; gain 24 dB; linearity measurements; low-noise amplifier; noise figure 14 dB; single-chip receiver frontend; voltage 3.3 V; Automotive engineering; Circuits; Gain; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; Low-noise amplifiers; Noise figure; Radar applications; Silicon germanium;
Conference_Titel :
Wireless and Microwave Technology Conference, 2009. WAMICON '09. IEEE 10th Annual
Conference_Location :
Clearwater, FL
Print_ISBN :
978-1-4244-4564-6
Electronic_ISBN :
978-1-4244-4565-3
DOI :
10.1109/WAMICON.2009.5207253
