• DocumentCode
    3015863
  • Title

    Photovoltaic effect in Si/SiOx heterostructures

  • Author

    Van Loon, R. V A ; Catchpole, K.R. ; Polman, A.

  • Author_Institution
    Center for Nanophotonics, FOM Inst. AMOLF, Amsterdam
  • fYear
    2008
  • fDate
    17-19 Sept. 2008
  • Firstpage
    393
  • Lastpage
    394
  • Abstract
    Si/SiOx heterostructures show a photovoltaic effect when the samples are annealed to form Si quantum dots. Subsequently applying dielectric breakdown increases the short-circuit current by up to an order of magnitude.
  • Keywords
    annealing; elemental semiconductors; photoconducting materials; photovoltaic effects; semiconductor quantum dots; semiconductor-insulator boundaries; silicon; silicon compounds; stoichiometry; Si-SiOx; annealing; photovoltaic effect; short-circuit current; silicon quantum dots; silicon-silicon oxide heterostructure; stoichiometry; Annealing; Atmosphere; Contacts; Dielectric breakdown; Electric breakdown; Lighting; Photovoltaic effects; Silicon; Substrates; Sun;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2008 5th IEEE International Conference on
  • Conference_Location
    Cardiff
  • Print_ISBN
    978-1-4244-1769-8
  • Electronic_ISBN
    978-1-4244-1768-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2008.4638211
  • Filename
    4638211
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3015863