Title :
The effect of temperature on the radiative performance of Ho-YAG thin film selective emitters
Author :
Lowe, Roland A. ; Chubb, Donald L. ; Good, Brian S.
Author_Institution :
Kent State Univ., OH, USA
Abstract :
In this paper, the authors present the thermophotovoltaic (TPV) converter emitter efficiency results for a thin film 25% Ho YAG (yttrium aluminum garnet, Y3Al5O12) selective emitter from 1000-1700 K with a platinum substrate. Spectral emittance and emissive power measurements were made (1.2<λ<3.2 μm) and used to calculate the radiative efficiency. The radiative efficiency and power density of rare earth doped selective emitters are strongly dependent on temperature and experimental results indicate an optimum temperature (1650 K for Ho YAG) for TPV applications
Keywords :
garnets; photovoltaic cells; power measurement; semiconductor device testing; semiconductor doping; solar cells; yttrium compounds; 1.2 to 3.2 mum; 1000 to 1700 K; 1650 K; Pt; Y3Al5O12; YAG:Ho; YAG:Ho thin film selective emitters; YAl5O12:Ho; applications; emissive power measurements; power density; radiative performance; rare earth metal dopants; spectral emittance measurements; temperature effects; thermophotovoltaic converters; Aluminum; Atomic measurements; Electron emission; Garnet films; Orbits; Q measurement; Solid state circuits; Temperature dependence; Transistors; Yttrium;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520726
