Title :
Degradation of crystalline quality due to interfacial strain in short period lattice-matched GaInAs/InP superlattices
Author :
Gerling, M. ; Ritter, D. ; Hamm, R.A. ; Chu, S.N.G.
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
Abstract :
Superlattices of Ga0.47In0.53As/InP were grown by metalorganic molecular beam epitaxy. Abrupt interfaces were obtained when the total superlattice period was larger than about 85 Å. When the total period was less than 85 Å the onset of three-dimensional growth was observed. Since no group III atom intermixing was detected in our samples we attribute this effect to the intrinsic interface strain
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; indium compounds; semiconductor growth; semiconductor superlattices; Ga0.47In0.53As-InP; crystalline quality; interface abruptness; interfacial strain; intermixing; metalorganic molecular beam epitaxy; short period lattice-matched superlattice; three-dimensional growth; Atomic layer deposition; Capacitive sensors; Crystallization; Degradation; Indium phosphide; Laser sintering; Metallic superlattices; Molecular beam epitaxial growth; X-ray diffraction; X-ray imaging;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600141
