Author_Institution :
Semicond. Devices Area, Central Electron. Eng. Res. Inst., Pilani, India
Abstract :
Steady-state operation of a vertical n-channel IGBT has been investigated by means of analytical models and simulations. P-I-N diode, bipolar transistor and MOSFET models have been applied to gain physical insight into the structure. A design approach has been formulated for blocking voltage capability, forward current density, forward voltage drop and latching current density, which is crucial to device operation. Based on this approach, a 1000 V, 20 A n-channel vertical IGBT has been designed. Various structural parameters such as W, Ln+ , LC, LCH and process parameters Xj , ρ□, tox, tpoly, impurity concentration, etc. have been computed. Trade-offs curves for Jc -Va, VF-d/La, JCL-L n+, LCL-CBS have been obtained from design and simulation. The calculated values of various design parameters are Nd=2.35×1014 atoms/cm 3, W=100 μm, p-base surface concentration=1×1017 atoms/cm3, p-base depth=4 μm, Ln+=6 μm, n+ depth=1 μm, LCH=2 μm and tox=9000 Å, with poly-Si gate. Unit cell size is 40 μm×40 μm. The results presented provide guidelines for designing high-voltage and high-current bipolar transistors for various applications
Keywords :
MOSFET; current density; design engineering; insulated gate bipolar transistors; p-i-n diodes; power bipolar transistors; semiconductor device models; 1 micron; 100 micron; 1000 V; 2 micron; 20 A; 4 micron; 40 micron; 6 micron; 9000 angstrom; MOSFET model; P-I-N diode model; SiO2-Si; analytical models; bipolar transistor model; blocking voltage capability; channel length; design parameters; device operation; forward current density; forward voltage drop; high-current bipolar transistors; high-voltage bipolar transistors; impurity concentration; latching current density; n-channel vertical IGBT; n+ depth; oxide thickness; p-base depth; p-base surface concentration; poly-Si gate; polysilicon thickness; process parameters; resistivity; simulations; steady-state operation; structural parameters; trade-offs curves; unit cell size; vertical N-channel IGBT; vertical N-channel IGBT design; Analytical models; Bipolar transistors; Current density; Impurities; Insulated gate bipolar transistors; MOSFET circuits; P-i-n diodes; Steady-state; Structural engineering; Voltage;
