Title :
HDMI transmitter in 32nM technology using 28Å MOS
Author :
Gupta, Nitin ; Nandy, Tapas ; Kundu, Somnath
Author_Institution :
STMicroelectron. Pvt. Ltd., Noida, India
Abstract :
The output driver of the HDMI transmitter is designed in 32nM using MOS of 28 Å gate oxide thickness. These MOS transistors are capable of handling 1.8v only. The circuit protects the MOS transistors exposed to 3.3v at the receiver termination, when the transmitter is power on, as well as, when it is power off. The area of the implemented HDMI Transmitter physical layer is 0.283mm2 and power consumption is 12mW @ 2.22Gbps (740Mbps/Channel) as seen on silicon.
Keywords :
MOS integrated circuits; MOSFET; driver circuits; transmitters; HDMI transmitter; MOS transistors; bit rate 2.22 Gbit/s; output driver; power 12 mW; power consumption; size 28 angstrom; size 32 nm; voltage 3.3 V; Logic gates; MOSFETs; Physical layer; Receivers; Silicon; Stress; Transmitters;
Conference_Titel :
Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
Conference_Location :
Seoul
Print_ISBN :
978-1-4673-0218-0
DOI :
10.1109/ISCAS.2012.6271657
