DocumentCode
3016135
Title
Analytical Theory of Graphene Nanoribbon Transistors
Author
Zhao, Pei ; Choudhury, Mihir ; Mohanram, Kartik ; Guo, Jing
Author_Institution
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL
fYear
2008
fDate
29-30 Sept. 2008
Firstpage
3
Lastpage
6
Abstract
Graphene has emerged as one of the most promising materials to address scaling challenges in the post silicon era. A simple model for graphene nanoribbon field-effect transistors (GNRFETs) is developed for treating the effects of edge bond relaxation, the third nearest neighbor interaction, and edge scattering, all of which are pronounced in GNRFETs, but not in carbon nanotube FETs.
Keywords
carbon; field effect transistors; nanoelectronics; semiconductor device models; C; GNRFETs; edge bond relaxation; edge scattering; graphene nanoribbon field-effect transistors; third nearest neighbor interaction; Analytical models; Bonding; Circuit testing; FETs; Nearest neighbor searches; Orbital calculations; Photonic band gap; Scattering; Silicon; Thermal conductivity; Graphene nanoribbons; analytical model; edge bond relaxation; edge scattering; third nearest neighbor interaction;
fLanguage
English
Publisher
ieee
Conference_Titel
Design and Test of Nano Devices, Circuits and Systems, 2008 IEEE International Workshop on
Conference_Location
Cambridge, MA
Print_ISBN
978-0-7695-3379-7
Type
conf
DOI
10.1109/NDCS.2008.22
Filename
4638323
Link To Document