DocumentCode
3016410
Title
A 11 µW 0°C–160°C temperature sensor in 90 nm CMOS for adaptive thermal monitoring of VLSI circuits
Author
Zjajo, Amir ; Van der Meijs, Nick ; Van Leuken, Rene
Author_Institution
Circuits & Syst. Group, Delft Univ. of Technol., Delft, Netherlands
fYear
2012
fDate
20-23 May 2012
Firstpage
2007
Lastpage
2010
Abstract
This paper reports design, efficiency and measurement results of the temperature sensor based on substrate bipolar transistors and a PTAT multiplier for adaptive thermal monitoring of deep-submicron VLSI circuits. The prototype temperature sensor with un-calibrated 3σ accuracy of 0.9°C within a 0°C-160°C temperature range has been fabricated in standard single poly, six metal 90nm CMOS, consumes only 11μW at 1V power supply and measures 0.05mm2.
Keywords
CMOS integrated circuits; VLSI; bipolar transistors; multiplying circuits; temperature measurement; temperature sensors; CMOS process; PTAT multiplier; adaptive thermal monitoring; deep-submicron VLSI circuits; power 11 muW; proportional-to-absolute temperature multiplier; size 90 nm; substrate bipolar transistors; temperature 0 degC to 160 degC; temperature sensor; uncalibrated 3σ accuracy; voltage 1 V; CMOS integrated circuits; Monitoring; Resistors; Temperature sensors; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
Conference_Location
Seoul
ISSN
0271-4302
Print_ISBN
978-1-4673-0218-0
Type
conf
DOI
10.1109/ISCAS.2012.6271672
Filename
6271672
Link To Document