DocumentCode
3016433
Title
Performance enhanced op-amp for 65nm CMOS technologies and below
Author
Perez, Aldo Peña ; Maloberti, Franco
Author_Institution
Dept. of Electron., Univ. of Pavia, Pavia, Italy
fYear
2012
fDate
20-23 May 2012
Firstpage
201
Lastpage
204
Abstract
Multistage operational amplifiers suitable for nanometer-scale CMOS technologies and low-voltage applications are described. The low intrinsic gain of transistors is compensated for with cascade of single-stage amplifiers. Techniques for compensations are revisited and the optimal solution identified. An example of a novel scheme that achieves 67 dB of DC gain, 320 MHz of bandwidth and 61 degrees of phase margin is presented. The power consumption is as low as 0.24 mW with a slew rate of 84.5 V/μ s. The CMOS technology is 65 nm; the design uses only minimum channel length transistors.
Keywords
CMOS analogue integrated circuits; low-power electronics; nanoelectronics; operational amplifiers; bandwidth 320 MHz; channel length transistor; gain 65 dB; low-voltage applications; multistage operational amplifiers; nanometer-scale CMOS technologies; op-amp performance enhancement; power 24 mW; single-stage amplifier cascade; size 65 nm; transistor intrinsic gain; CMOS integrated circuits; CMOS technology; Capacitors; Gain; Topology; Transconductance; Transistors; Amplifiers; compensation; multistage amplifiers; operational amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
Conference_Location
Seoul
ISSN
0271-4302
Print_ISBN
978-1-4673-0218-0
Type
conf
DOI
10.1109/ISCAS.2012.6271673
Filename
6271673
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