• DocumentCode
    3016433
  • Title

    Performance enhanced op-amp for 65nm CMOS technologies and below

  • Author

    Perez, Aldo Peña ; Maloberti, Franco

  • Author_Institution
    Dept. of Electron., Univ. of Pavia, Pavia, Italy
  • fYear
    2012
  • fDate
    20-23 May 2012
  • Firstpage
    201
  • Lastpage
    204
  • Abstract
    Multistage operational amplifiers suitable for nanometer-scale CMOS technologies and low-voltage applications are described. The low intrinsic gain of transistors is compensated for with cascade of single-stage amplifiers. Techniques for compensations are revisited and the optimal solution identified. An example of a novel scheme that achieves 67 dB of DC gain, 320 MHz of bandwidth and 61 degrees of phase margin is presented. The power consumption is as low as 0.24 mW with a slew rate of 84.5 V/μ s. The CMOS technology is 65 nm; the design uses only minimum channel length transistors.
  • Keywords
    CMOS analogue integrated circuits; low-power electronics; nanoelectronics; operational amplifiers; bandwidth 320 MHz; channel length transistor; gain 65 dB; low-voltage applications; multistage operational amplifiers; nanometer-scale CMOS technologies; op-amp performance enhancement; power 24 mW; single-stage amplifier cascade; size 65 nm; transistor intrinsic gain; CMOS integrated circuits; CMOS technology; Capacitors; Gain; Topology; Transconductance; Transistors; Amplifiers; compensation; multistage amplifiers; operational amplifiers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
  • Conference_Location
    Seoul
  • ISSN
    0271-4302
  • Print_ISBN
    978-1-4673-0218-0
  • Type

    conf

  • DOI
    10.1109/ISCAS.2012.6271673
  • Filename
    6271673