DocumentCode
3016438
Title
Study of GaxIn1×xP layers grown on InP for HFET application
Author
Cohen, G.M. ; Zisman, P. ; Bahir, G. ; Ritter, D.
Author_Institution
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
fYear
1997
fDate
11-15 May 1997
Firstpage
324
Lastpage
327
Abstract
The crystalline quality of tensile strained Ga0.25In 0.75P layers grown on InP substrates was investigated. Samples were grown by metal-organic molecular beam epitaxy. Little or no relaxation was found in Ga0.25In0.75P layers which were up 500 Å thick. Thicker layers exhibited anisotropic strain relaxation, and the main relaxation direction was [11¯0]. Using strain compensation we were able to reduce relaxation in 650 Å thick layers. HFET devices with a tensile 200 Å thick Ga0.25 In0.75P barrier, a composite channel, and modulated channel doping were fabricated. The HFETs with 1 micron long gates exhibited a transconductance higher than 150 mS/mm for a wide range of gate voltages, and a breakdown voltage of 9 V
Keywords
III-V semiconductors; chemical beam epitaxial growth; gallium compounds; indium compounds; junction gate field effect transistors; semiconductor epitaxial layers; semiconductor growth; Ga0.25In0.75P; HFET device; InP; InP substrate; anisotropic strain relaxation; breakdown voltage; composite channel; crystalline quality; growth; metal-organic molecular beam epitaxy; modulated channel doping; strain compensation; tensile strained Ga0.25In0.75P barrier layer; transconductance; Anisotropic magnetoresistance; Capacitive sensors; Crystallization; Doping; HEMTs; Indium phosphide; MODFETs; Molecular beam epitaxial growth; Substrates; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location
Cape Cod, MA
ISSN
1092-8669
Print_ISBN
0-7803-3898-7
Type
conf
DOI
10.1109/ICIPRM.1997.600143
Filename
600143
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