Photochemical Active of SiO2, WO3 Doping on TiO2 Thin Film in H2S Removal

Author

Ge Jie ; Zhang Cheng-zhong ; Liu Tao

Author_Institution

Sch. of Environ. & Municipal Eng., Xi´an Univ. of Archit. & Technol., Xi´an, China

fYear

2010

fDate

25-27 June 2010

Firstpage

3981

Lastpage

3984

Abstract

Recently, photocatalytic oxidation of pollutant in air with semiconductor photocatalyst is a hot spot in environmental science. The feasibility study of photochemical active of degrade H₂S by SiO₂, WO₃ doping on TiO₂ thin film has been taken. SiO₂/TiO₂ and WO₃/TiO₂ composite photocatalyst thin films have been made, and its purification capacity of H₂S gas has been tested. X-ray diffraction and scanning electron microscopy have been employed to describe the character. Composite films of SiO₂/TiO₂ showed good removal efficiency of H₂S more than TiO₂ film about 8.59%. The WO₃/TiO₂ composite films have photocatalytic activity with H₂S gas purification in the visible light. Theoretically H₂S gas can be purification by WO₃/TiO₂ composite photocatalyst thin film under the visible light conditions.

Keywords

X-ray diffraction; air pollution; catalysis; hydrogen compounds; photochemistry; scanning electron microscopy; silicon compounds; thin films; titanium compounds; tungsten compounds; H₂S; SiO₂; TiO₂; WO₃; X-ray diffraction; air; environmental science; photocatalyst thin films; photocatalytic oxidation; photochemical active; pollutant; scanning electron microscopy; semiconductor photocatalyst; Absorption; Doping; Films; Purification; Scanning electron microscopy; Surface treatment; X-ray diffraction; H2S; Photocatalysis; SiO2/TiO2; WO3/TiO2; component;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Control Engineering (ICECE), 2010 International Conference on

Conference_Location

Wuhan

Print_ISBN

978-1-4244-6880-5

Type

conf

DOI

10.1109/iCECE.2010.970

Filename

5631765