Efficient ZnO/CdS/InP heterojunction solar cell

Author

Saito, Shotaro ; Hashimoto, Yoshio ; Ito, Kentara

Author_Institution

Dept. of Electr. & Electron. Eng., Shinshu Univ., Nagano, Japan

Volume

2

fYear

1994

fDate

5-9 Dec 1994

Firstpage

1867

Abstract

Heterojunction solar cells consisting of an atom beam sputtered transparent conductive window layer/chemical bath deposited CdS buffer layer/p-type InP single crystal structure were studied. A total area cell efficiency up to 17.8% was obtained at AM 1.5 and was expected to reach as high as 23% based on this structure. The buffer layer 45 to 240 nm thick plays a key role to reduce sputter damages which would be formed at the surface of InP without this layer. It was found that the the choice of window materials has an important effect on the aging properties of the cell. When ZnO is used as a window material, the fill factor of the cell was particularly degraded by aging. Using an atom beam sputtered In₂O₃ window layer, the authors have been able to obtain more reliable solar cells

Keywords

II-VI semiconductors; III-V semiconductors; cadmium compounds; indium compounds; p-n heterojunctions; semiconductor device testing; semiconductor growth; semiconductor thin films; solar cells; sputter deposition; sputtered coatings; zinc compounds; 17.8 percent; 23 percent; 45 to 240 nm; In₂O₃; ZnO-CdS-InP; ZnO/CdS/InP heterojunction solar cell; aging properties; atom beam sputtering; buffer layer; fill factor; sputter damage; window layer; Aging; Atomic beams; Atomic layer deposition; Buffer layers; Chemicals; Degradation; Heterojunctions; Indium phosphide; Photovoltaic cells; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.520730

Filename

520730