Title :
A high-gain high-linearity distributed amplifier for ultra-wideband-applications using a low cost SiGe BiCMOS technology
Author :
Sewiolo, Benjamin ; Kissinger, Dietmar ; Fischer, Georg ; Weigel, Robert
Author_Institution :
Inst. for Electron. Eng., Univ. of Erlangen-Nuremberg, Erlangen, Germany
Abstract :
In this paper the analysis, design and characterization of a 1-15 GHz power distributed amplifier for ultra-wideband radar and sensing applications are presented. The amplifier is fabricated in a low cost 0.25 mum SiGe BiCMOS technology with a transit frequency ft of 25 GHz. The circuit integrates four cascode gain cells, which are capacitively coupled to the base line for power optimization and bandwidth enhancement. Up to 16.9 dBm output power have been measured at the 1 dB compression point (P1 dB) in the desired frequency range with an associated gain of 11.5 dB and a gain flatness of plusmn1 dB with total power consumption of 450 mW. The maximum third order intermodulation intercept point (OIP3) is 21.5 dBm. The chip size of the amplifier is 1.19mm2.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; UHF power amplifiers; microwave power amplifiers; ultra wideband radar; BiCMOS technology; SiGe; bandwidth enhancement; cascode gain cells; frequency 1 GHz to 15 GHz; frequency 25 GHz; gain 11.5 dB; high-gain high-linearity distributed power amplifier; power 450 mW; power optimization; size 0.25 mum; third order intermodulation intercept point; ultra-wideband radar; BiCMOS integrated circuits; Costs; Coupling circuits; Distributed amplifiers; Frequency; Gain; Germanium silicon alloys; Radar applications; Silicon germanium; Ultra wideband technology;
Conference_Titel :
Wireless and Microwave Technology Conference, 2009. WAMICON '09. IEEE 10th Annual
Conference_Location :
Clearwater, FL
Print_ISBN :
978-1-4244-4564-6
Electronic_ISBN :
978-1-4244-4565-3
DOI :
10.1109/WAMICON.2009.5207301
