AlGaN/GaN HEMT temperature-dependent large-signal model thermal circuit extraction with verification through advanced thermal imaging

Investigation has been done on procedure, development and verification of a large-signal, temperature-dependent model for aluminum-gallium-nitride/gallium-nitride (AlGaN-GaN) high-electron-mobility transistors (HEMTs). Procedural issues have been designed to investigate model selection based on application and operation over varying bias. Theoretical and experimental analysis has been completed on device operating point selection in measurement and modeling to account for thermal coefficient extraction and RF dispersion effects. The model has been optimized for use in power amplifier design applications that apply class AB operation. Advanced thermal imaging verification has been performed to validate thermal resistance modeling parameters.