Title :
Optical and structural characterization of InAsP/InGaP strain compensated multiple quantum wells grown by GSMBE
Author :
Kuo, H.C. ; Thomas, Stephan ; Curtis, A.P. ; Lin, C.H. ; Horton, T.U. ; Stillman, G.E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
High-quality InAsP/InP (3ML)/InGaP SC-MQWs with zero net strain up to 40 periods were grown by GSMBE. Compared with uncompensated InAsP/InP strained MQWs and InAsP/lnGaP SC-MQWs without the InP insertion layers, much sharper and symmetric satellite peaks in double-crystal X-ray diffraction and excellent photoluminescence was obtained from SC-MQWs with the InP insertion layers
Keywords :
III-V semiconductors; X-ray diffraction; chemical beam epitaxial growth; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum wells; 40 periods; GSMBE; InAsP-InGaP; InAsP-InP-InGaP; InAsP/InGaP strain compensated multiple quantum wells; InP insertion layers; double-crystal X-ray diffraction; high-quality InAsP/InP/InGaP SC-MQW; optical characterization; photoluminescence; structural characterization; symmetric satellite peaks; zero net strain; Capacitive sensors; Conducting materials; Electrons; Indium phosphide; Laboratories; Optical materials; Optical scattering; Quantum computing; Solids; Tensile strain;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600146
