Title :
Dispersion Inversion in High Index Contrast AlGaAs-Nanowires
Author :
Meier, J. ; Mojahedi, M. ; Aitchison, J.S.
Author_Institution :
Univ. of Toronto, Toronto
Abstract :
We present numerical simulations of the temporal dispersion in high contrast AlGaAs nanowires and predict the inversion of the group velocity dispersion for sub-micron sized wires.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; nanowires; optical dispersion; optical materials; optical waveguides; semiconductor quantum wires; AlGaAs; group velocity dispersion inversion; high index contrast nanowires; high index contrast waveguides; numerical simulations; submicron sized wires; Buffer layers; Etching; Gallium arsenide; Integrated optics; Nanowires; Numerical simulation; Optical waveguides; Photonic band gap; Silicon on insulator technology; Tellurium;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4453276
