Performances of RF PA classes in LINC systems

Author

Montesinos, Ronald ; Berland, Corinne ; Hussein, Mazen Abi ; Venard, Olivier ; Descamps, Philippe

Author_Institution

Lab. commun NXP-CRISMAT, UCBN, Caen, France

fYear

2012

fDate

20-23 May 2012

Firstpage

2179

Lastpage

2182

Abstract

This paper presents the impact of the class of radio frequency (RF) power amplifier (PA) in LINC (LInear amplification using Non-linear Components) transmitter architecture. The analysis and design of RF PAs classes (D, E, F) and CHIREIX combiner were achieved by Agilent´s ADS simulations using an ideal transistor and a GaN HEMT transistor model. Performances of the system are evaluated using a 16QAM modulation at 900MHz with 5.63dB Peak-to-Average Power Ratio (PAPR). This study shows the advantages and drawbacks of this architecture.

Keywords

III-V semiconductors; UHF power amplifiers; gallium compounds; high electron mobility transistors; integrated circuit modelling; quadrature amplitude modulation; radio transmitters; wide band gap semiconductors; 16QAM modulation; Agilent ADS simulations; CHIREIX combiner; LINC systems; LINC transmitter architecture; RF PA class; frequency 900 MHz; gallium nitride HEMT transistor model; linear amplification-nonlinear components; peak-to-average power ratio; radio frequency power amplifier; Gallium nitride; HEMTs; Linearity; Power generation; Radio frequency; Radio transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), 2012 IEEE International Symposium on

Conference_Location

Seoul

ISSN

0271-4302

Print_ISBN

978-1-4673-0218-0

Type

conf

DOI

10.1109/ISCAS.2012.6271721

Filename

6271721