Title :
Performances of RF PA classes in LINC systems
Author :
Montesinos, Ronald ; Berland, Corinne ; Hussein, Mazen Abi ; Venard, Olivier ; Descamps, Philippe
Author_Institution :
Lab. commun NXP-CRISMAT, UCBN, Caen, France
Abstract :
This paper presents the impact of the class of radio frequency (RF) power amplifier (PA) in LINC (LInear amplification using Non-linear Components) transmitter architecture. The analysis and design of RF PAs classes (D, E, F) and CHIREIX combiner were achieved by Agilent´s ADS simulations using an ideal transistor and a GaN HEMT transistor model. Performances of the system are evaluated using a 16QAM modulation at 900MHz with 5.63dB Peak-to-Average Power Ratio (PAPR). This study shows the advantages and drawbacks of this architecture.
Keywords :
III-V semiconductors; UHF power amplifiers; gallium compounds; high electron mobility transistors; integrated circuit modelling; quadrature amplitude modulation; radio transmitters; wide band gap semiconductors; 16QAM modulation; Agilent ADS simulations; CHIREIX combiner; LINC systems; LINC transmitter architecture; RF PA class; frequency 900 MHz; gallium nitride HEMT transistor model; linear amplification-nonlinear components; peak-to-average power ratio; radio frequency power amplifier; Gallium nitride; HEMTs; Linearity; Power generation; Radio frequency; Radio transmitters;
Conference_Titel :
Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
Conference_Location :
Seoul
Print_ISBN :
978-1-4673-0218-0
DOI :
10.1109/ISCAS.2012.6271721
