Highly efficient compact size 0.7W broad bandwidth power amplifier

Author

Thein, T.T. ; Law, C.L. ; Fu, K. ; Aung, A.

Author_Institution

Positioning & Wireless Technol. Center, Nanyang Technol. Univ., Singapore, Singapore

fYear

2012

fDate

20-23 May 2012

Firstpage

2187

Lastpage

2190

Abstract

In this paper, we present a highly efficient compact size three stage distributed power amplifier (DPA) for high power broad bandwidth applications. The DPA is fabricated using InGaP/GaAs hetero-junction bipolar transistor (HBT) technology. The design trade-off between power, efficiency and terminal matching is discussed. Reactive termination is used at the idle port of input and output transmission lines to improve efficiency. By compromising matching, the chip size is optimized to 1.8 mm². Output power at 1dB gain compression (P1dB) is 30.5dBm at 3.5GHz and averages output power is around 28.5dBm across the (2.5 to 6) GHz band. The associated maximum and average Power Added Efficiency (PAE) at P1dB are 43% and 33%, respectively. Average large signal gain is 7 dB across the band. Small signal simulation results agree well with the measurements results.

Keywords

III-V semiconductors; distributed amplifiers; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; microwave power amplifiers; GaP-GaAs; HBT technology; broad-bandwidth power amplifier; efficiency 33 percent; efficiency 43 percent; frequency 2.5 GHz to 6 GHz; gain 1 dB; gain 7 dB; gain compression; heterojunction bipolar transistor; highly-efficient compact size; power 0.7 W; power added efficiency; reactive termination; small-signal simulation; terminal matching; three-stage DPA; three-stage distributed power amplifier; transmission lines; Bandwidth; Frequency measurement; Gain; Gallium arsenide; Heterojunction bipolar transistors; Power generation; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), 2012 IEEE International Symposium on

Conference_Location

Seoul

ISSN

0271-4302

Print_ISBN

978-1-4673-0218-0

Type

conf

DOI

10.1109/ISCAS.2012.6271723

Filename

6271723