Title :
An ultra-low-power 902–928MHz RF receiver front-end in CMOS 90nm process
Author :
Tu, Xiaojun ; Holleman, Jeremy H.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Tennessee, Knoxville, TN, USA
Abstract :
This paper presents a CMOS RF receiver front-end suitable for ultra-low-power operation. In order to achieve desired gain and linearity of receiver front-end at a 1V supply voltage, current reuse and optimum gate biasing techniques are employed. The proposed architecture includes merged LNA and mixer, operating in the sub-threshold region, and designed for the 902-928MHz ISM band. The proposed circuit is designed in a 90nm CMOS Process and occupies 0.04mm2. The post-layout simulations of front end show a voltage gain of 17.8dB, a noise figure of 6.7 dB and IIP3 better than -8 dBm. Its power consumption is only 218uW from a 1V supply.
Keywords :
CMOS analogue integrated circuits; UHF amplifiers; UHF mixers; low noise amplifiers; low-power electronics; radio receivers; CMOS process; ISM band; LNA; current reuse technique; frequency 902 MHz to 928 MHz; front-end post-layout simulation; gain 17.8 dB; mixer; noise figure 6.7 dB; optimum gate biasing technique; power 218 muW; receiver front-end gain; receiver front-end linearity; size 90 nm; subthreshold region; ultralow-power RF receiver front-end; voltage 1 V; CMOS integrated circuits; Integrated circuit modeling; Logic gates; Mixers; Noise; Radio frequency; Receivers; CMOS; ISM; front-end; low power; low-noise amplifier; mixer;
Conference_Titel :
Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
Conference_Location :
Seoul
Print_ISBN :
978-1-4673-0218-0
DOI :
10.1109/ISCAS.2012.6271726
