Large Qxf product for HBAR using Smart Cut ™ transfer of LiNbO3 thin layers onto LiNbO3 substrate

Author

Pijolat, M. ; Reinhardt, A. ; Defaÿ, E. ; Deguet, C. ; Mercier, D. ; Aïd, M. ; Moulet, J.S. ; Ghyselen, B. ; Gachon, D. ; Ballandras, S.

Author_Institution

CEA LETI MINATEC, Grenoble

fYear

2008

fDate

2-5 Nov. 2008

Firstpage

201

Lastpage

204

Abstract

In this paper, we propose a novel approach for HBAR devices using the Smart Cuttrade technology to obtain thin homogeneous X-cut single crystal films of LiNbO₃. Sub-micron layers were successfully transferred onto LiNbO₃ handle wafers. RF characterizations were performed around 1.95 GHz and quality factors in excess of 40 000 are extracted, proving the applicability of layer transfer by Smart Cut trade to acoustic devices. An excellent matching between simulations and experimental data as well as TCF measurements are presented in this paper.

Keywords

Q-factor; acoustic resonators; bulk acoustic wave devices; crystal resonators; lithium compounds; piezoelectric thin films; thin film devices; HBAR devices; LiNbO₃; LiNbO₃-LiNbO₃; RF characterization; Smart Cut technology; TCF measurement; acoustic devices; high-overtone bulk acoustic resonators; piezoelectric layers; quality factors; temperature coefficient-of-frequency measurement; thin homogeneous X-cut single crystal films; Acoustic devices; Acoustic measurements; Acoustic waves; Electrodes; Q factor; Radio frequency; Semiconductor films; Substrates; Temperature; Wafer bonding; HBAR; Lithium Niobate; Q f product; Smart Cut ™; X-cut;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 2008. IUS 2008. IEEE

Conference_Location

Beijing

Print_ISBN

978-1-4244-2428-3

Electronic_ISBN

978-1-4244-2480-1

Type

conf

DOI

10.1109/ULTSYM.2008.0049

Filename

4803258