Title :
Large Qxf product for HBAR using Smart Cut ™ transfer of LiNbO3 thin layers onto LiNbO3 substrate
Author :
Pijolat, M. ; Reinhardt, A. ; Defaÿ, E. ; Deguet, C. ; Mercier, D. ; Aïd, M. ; Moulet, J.S. ; Ghyselen, B. ; Gachon, D. ; Ballandras, S.
Author_Institution :
CEA LETI MINATEC, Grenoble
Abstract :
In this paper, we propose a novel approach for HBAR devices using the Smart Cuttrade technology to obtain thin homogeneous X-cut single crystal films of LiNbO3. Sub-micron layers were successfully transferred onto LiNbO3 handle wafers. RF characterizations were performed around 1.95 GHz and quality factors in excess of 40 000 are extracted, proving the applicability of layer transfer by Smart Cut trade to acoustic devices. An excellent matching between simulations and experimental data as well as TCF measurements are presented in this paper.
Keywords :
Q-factor; acoustic resonators; bulk acoustic wave devices; crystal resonators; lithium compounds; piezoelectric thin films; thin film devices; HBAR devices; LiNbO3; LiNbO3-LiNbO3; RF characterization; Smart Cut technology; TCF measurement; acoustic devices; high-overtone bulk acoustic resonators; piezoelectric layers; quality factors; temperature coefficient-of-frequency measurement; thin homogeneous X-cut single crystal films; Acoustic devices; Acoustic measurements; Acoustic waves; Electrodes; Q factor; Radio frequency; Semiconductor films; Substrates; Temperature; Wafer bonding; HBAR; Lithium Niobate; Q f product; Smart Cut ™; X-cut;
Conference_Titel :
Ultrasonics Symposium, 2008. IUS 2008. IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2428-3
Electronic_ISBN :
978-1-4244-2480-1
DOI :
10.1109/ULTSYM.2008.0049
