Title :
InP-based quantum well solar cells grown by chemical beam epitaxy
Author :
Freundlich, A. ; Rossignol, V. ; Vilela, M.F. ; Renaud, P. ; Bensacula, A. ; Medelci, N.
Author_Institution :
Space Vacuum Epitaxy Center, Houston Univ., TX, USA
Abstract :
We present the first experimental investigation of InP based-multiquantum well (MQW) solar cells. Lattice matched In0.47 Ga0.53As/InP and strained InAsxP1-x /InP (x=0.3 to 0.7) multiquantum wells were introduced in the intrinsic region of a p-i(MQW)-n InP solar cell. All device structures (MQW and InP p and n layer) were grown by chemical beam epitaxy
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; solar cells; In0.47Ga0.53As-InP; InAsP-InP; chemical beam epitaxial growth; lattice matched In0.47Ga0.53As/InP; p-i(MQW)-n InP solar cell; strained InAsxP1-x/InP; Chemicals; Epitaxial growth; Indium phosphide; Lattices; Molecular beam epitaxial growth; Photonic band gap; Photovoltaic cells; Quantum well devices; Space technology; Temperature;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520735
