• DocumentCode
    3017944
  • Title

    High sensitive THz Faraday rotation measurements in doped semiconductors

  • Author

    Ikebe, Yohei ; Shimano, Ryo

  • Author_Institution
    Univ. of Tokyo, Tokyo
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We present a highly sensitive terahertz Faraday measurement scheme with the detection sensitivity of Faraday rotation as small as 1 mrad. The scheme was applied to n-doped Si to examine the carrier density and mobility.
  • Keywords
    Faraday effect; carrier density; carrier mobility; elemental semiconductors; silicon; Si; carrier density; carrier mobility; detection sensitivity; terahertz Faraday rotation; Charge carrier density; Dielectrics; Electrochemical impedance spectroscopy; Faraday effect; Laser mode locking; Magnetic materials; Polarization; Rotation measurement; Submillimeter wave measurements; Ultrafast optics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/CLEO.2007.4453309
  • Filename
    4453309
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3017944