Title :
High sensitive THz Faraday rotation measurements in doped semiconductors
Author :
Ikebe, Yohei ; Shimano, Ryo
Author_Institution :
Univ. of Tokyo, Tokyo
Abstract :
We present a highly sensitive terahertz Faraday measurement scheme with the detection sensitivity of Faraday rotation as small as 1 mrad. The scheme was applied to n-doped Si to examine the carrier density and mobility.
Keywords :
Faraday effect; carrier density; carrier mobility; elemental semiconductors; silicon; Si; carrier density; carrier mobility; detection sensitivity; terahertz Faraday rotation; Charge carrier density; Dielectrics; Electrochemical impedance spectroscopy; Faraday effect; Laser mode locking; Magnetic materials; Polarization; Rotation measurement; Submillimeter wave measurements; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4453309
