Title :
Intersubband Transition of AlN/GaN Quantum Wells in Optimized AlN-based Waveguide Structure
Author :
Shimizu, T. ; Kumtornkittikul, C. ; Iizuka, N. ; Sugiyama, M. ; Nakano, Y.
Author_Institution :
Univ. of Tokyo, Tokyo
Abstract :
We achieved low-power saturation of intersubband absorption at 1.5 mum with AIN-based AIN/GaN quantum wells. By optimizing the etching condition of waveguides, the saturation energy was reduced by a factor of 3.
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium compounds; optical saturation; optical waveguides; semiconductor quantum wells; wide band gap semiconductors; AlN-GaN; etching; intersubband absorption; low-power saturation; quantum wells; saturation energy; waveguide structure; wavelength 1.5 mum; Absorption; Communication switching; Epitaxial layers; Etching; Gallium nitride; Optical waveguides; Propagation losses; Quantum well devices; Switches; Waveguide transitions;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4453317
