DocumentCode :
3018208
Title :
Ultrafast Intervalley Transitions in GaN Single Crystals
Author :
Wu, Shuai ; Geiser, P. ; Jun, J. ; Karpinski, J. ; Sobolewski, Roman
Author_Institution :
Univ. of Rochester, Rochester
fYear :
2007
fDate :
6-11 May 2007
Firstpage :
1
Lastpage :
2
Abstract :
We have studied time-resolved intervalley transitions of electrons between the conduction band Gamma and L valleys in bulk GaN crystals using a two-color, femtosecond, pump-probe technique. The transition threshold and intervalley scattering times were determined.
Keywords :
III-V semiconductors; conduction bands; gallium compounds; high-speed optical techniques; infrared spectra; time resolved spectra; ultraviolet spectra; wide band gap semiconductors; GaN; conduction band; femtosecond pump-probe technique; intervalley scattering times; near-infrared spectroscopy; single crystals; time-resolved intervalley transitions; transition threshold; two-color pump-probe technique; ultrafast intervalley transitions; ultraviolet spectroscopy; Crystals; Electrons; Gallium nitride; Laser excitation; Laser transitions; Optical scattering; Particle scattering; Probes; Spectroscopy; Ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
Type :
conf
DOI :
10.1109/CLEO.2007.4453323
Filename :
4453323
Link To Document :
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