Title :
Statistical device simulation of intrinsic parameter fluctuation in 16-nm-gate n- and p-type Bulk FinFETs
Author :
Yu-Yu Chen ; Wen-Tsung Huang ; Sheng-Chia Hsu ; Han-Tung Chang ; Chieh-Yang Chen ; Chin-Min Yang ; Li-Wen Chen ; Yiming Li
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
In this paper, we estimate the influence of random dopants (RDs), interface traps (ITs), and random work functions (WKs) using the experimentally calibrated 3D device simulation on DC characteristic of high-κ / metal gate n- and p-type bulk fin-typed field-effect-transistors. We further study these intrinsic parameter fluctuations´ impact on drain induced barrier lowering (DIBL). The main findings of this work show the RDF and WKF on n-type device are larger than that of p-type one. The DIBL is dominated by the number of random dopants.
Keywords :
MOSFET; doping profiles; interface states; quantum theory; semiconductor device models; work function; drain induced barrier lowering; field effect transistors; high-k metal gate devices; interface traps; intrinsic parameter fluctuation; n type bulk FinFET; p type bulk FinFET; random dopants; random work functions; statistical device simulation; FinFETs; Fluctuations; Logic gates; Metals; Resource description framework; Semiconductor process modeling; Three-dimensional displays;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2013 13th IEEE Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-0675-8
DOI :
10.1109/NANO.2013.6720994
