Dynamics of the kink effect in InAlAs/InGaAs HEMTs

Author

Ernst, A.N. ; Somerville, M.H. ; Alamo, J. A del

Author_Institution

MIT, Cambridge, MA, USA

fYear

1997

fDate

11-15 May 1997

Firstpage

353

Lastpage

356

Abstract

We have carried out pulsed measurements of the kink effect in InAlAs/InGaAs on InP HEMTs with nanosecond resolution. Our measurements show that the kink turns on first the higher drain-to-source voltage V _DS. The rate at which the kink builds-up is seen to increase with both V_DS and gate-to-source voltage V_GS. In general, the kink´s characteristic time constant strongly depends on V _DS and V_GS. Values between 50 ns and 100 μs have been measured in a single device. These data should be instrumental in formulating a hypothesis for the physical origin of the kink

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; millimetre wave power transistors; power field effect transistors; 50 ns to 100 mus; InAlAs-InGaAs; InAlAs/InGaAs HEMT; InP; characteristic time constant; drain-to-source voltage; gate-to-source voltage; kink effect dynamics; nanosecond resolution; physical origin; pulsed measurements; Delay; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Pulse amplifiers; Pulse measurements; Voltage; Voltmeters;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600154

Filename

600154