Title :
Direct numerical simulation of the large-signal RF behavior of power transistors
Author :
Blakey, Peter A. ; Khazhinsky, Michael G. ; Loechelt, Gary H.
Author_Institution :
Lab. of Commun. Products, Motorola Inc., Tempe, AZ, USA
Abstract :
Commercial device simulation software can now be used to perform direct numerical simulation of the large-signal behavior of RF power transistors. However, the methodologies that exploit this capability are still at a very early stage of development. In this paper the relevant capabilities of commercial software are summarized, and techniques and procedures for exploiting these capabilities are described. Two non-trivial application examples are then presented. The first is a simulation of the effect of load impedance on the characteristics of a GaAs MESFET class AB power amplifier used for wireless applications at 1.8 GHz. The second is a simulation of the impact of base implant dose on the composite triple beat (CTB) performance of a NPN BJT used for CATV applications
Keywords :
digital simulation; power transistors; semiconductor device models; time-domain analysis; 1.8 GHz; CATV applications; GaAs; NPN BJT; base implant dose; class AB power amplifier; composite triple beat; device simulation software; direct numerical simulation; large-signal RF behavior; load impedance; power transistors; wireless applications; Application software; Gallium arsenide; Impedance; Implants; MESFETs; Numerical simulation; Power amplifiers; Power transistors; Radio frequency; Software performance;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications Workshop, 1996. EDMO
Conference_Location :
Leeds
Print_ISBN :
0-7803-3130-3
DOI :
10.1109/EDMO.1996.575790
