Title :
Incorporating 2D quantum effects into full band Monte Carlo simulations of QWFETs
Author :
Marino, Fabio Alessio ; Tierney, Brian ; Akis, R. ; Saraniti, M. ; Goodnick, S.M.
Author_Institution :
Sch. of Electr., Arizona State Univ., Tempe, AZ, USA
Abstract :
A method for incorporating 2D quantum mechanical effects into a full-band Cellular Monte Carlo simulator is described and applied to the simulation of Quantum Well Field Effect Transistors (QWFETs). Incorporating all relevant scattering mechanisms, good agreement is obtained between simulation and experiment in the case of a device with an InGaAs channel. The effect of scaling the QW width is also investigated.
Keywords :
III-V semiconductors; Monte Carlo methods; field effect transistors; gallium arsenide; indium compounds; quantum well devices; 2D quantum mechanical effects; InGaAs; InGaAs channel; QWFET; full-band cellular Monte Carlo simulator; quantum well field effect transistors; scattering mechanism; Electric potential; Indium gallium arsenide; Monte Carlo methods; Quantum mechanics; Scattering; Solid modeling; Three-dimensional displays; III–V devices; Monte Carlo methods; QWFETs;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2013 13th IEEE Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-0675-8
DOI :
10.1109/NANO.2013.6721009
