Title :
AlGaAs/GaAs HBT current gain instability: Physical mechanism and SPICE simulation
Author :
Liou, J.J. ; Sheu, S. ; Huang, C.I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA
Abstract :
The current gain instability of AlGaAs/GaAs heterojunction bipolar transistor (HBT) is investigated, and a new AlGaAs/GaAs HBT model for SPICE circuit simulation is presented. Such a model includes the effects of base and collector leakage currents and the stress-induced abnormal base current, thus allowing the simulation of the performance of HBT circuits subjected to the electrical/thermal stress test (i.e., burn-in test)
Keywords :
III-V semiconductors; SPICE; aluminium compounds; circuit analysis computing; differential amplifiers; digital simulation; gallium arsenide; heterojunction bipolar transistors; leakage currents; semiconductor device reliability; AlGaAs-GaAs; HBT; III-V semiconductors; SPICE simulation; burn-in test; circuit simulation; current gain instability; electrical/thermal stress test; leakage currents; physical mechanism; stress-induced abnormal base current; Bipolar transistors; Circuit simulation; Circuit testing; Computational modeling; Computer simulation; Gallium arsenide; Heterojunction bipolar transistors; Leakage current; SPICE; Stress;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications Workshop, 1996. EDMO
Conference_Location :
Leeds
Print_ISBN :
0-7803-3130-3
DOI :
10.1109/EDMO.1996.575791
