Title :
Dynamics of exciton recombination in InAs Quantum Dots embedded in InGaAs/GaAs Quantum Well
Author :
Mu, Xiaodong ; Ding, Yujie J. ; Ooi, Boon S. ; Hopkinson, Mark
Author_Institution :
Lehigh Univ., Bethlehem
Abstract :
Using time-resolved pump-probe differential photoluminescence technique, exciton decay time was measured to significantly increase as temperature was increased in InAs quantum dots embedded in an InGaAs/GaAs quantum well.
Keywords :
III-V semiconductors; electron-hole recombination; excitons; gallium arsenide; indium compounds; optical pumping; photoluminescence; semiconductor quantum dots; semiconductor quantum wells; time resolved spectra; InAs; InGaAs-GaAs; exciton decay time; exciton recombination; quantum dots; quantum well; time-resolved pump-probe differential photoluminescence; Excitons; Gallium arsenide; Indium gallium arsenide; Photoluminescence; Quantum computing; Quantum dot lasers; Quantum dots; Radiative recombination; Temperature; Time measurement;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4453369
