Title :
Silicon angular resonance gyroscope by deep ICPRIE and XeF2 gas etching
Author :
Choi, Jae-joon ; Toda, Risaku ; Minami, Kazuyuki ; Esashi, Masayoshi
Author_Institution :
Fac. of Eng., Tohoku Univ., Sendai, Japan
Abstract :
An angular resonance silicon gyroscope was fabricated by deep RIE and XeF2 gas etching. Using these two etching methods, a sensor which has beams in the center of the thickness of its mass could be fabricated very precisely. The sensor has a glass-silicon-glass structure and its resonator is excited electrostatically and the vibration caused by the angular rate is measured capacitively. Sensor sensitivity obtained was 2.1 fF/(deg/sec)
Keywords :
elemental semiconductors; gyroscopes; microsensors; semiconductor technology; silicon; sputter etching; xenon compounds; Si angular resonance gyroscope; XeF2; XeF2 gas etching; angular rate; deep ICPRIE; deep RIE; glass-Si-glass structure; sensor sensitivity; vibration; Dry etching; Electrodes; Glass; Gyroscopes; Micromachining; Resonance; Silicon; Sputter etching; Vibration measurement; Wet etching;
Conference_Titel :
Micro Electro Mechanical Systems, 1998. MEMS 98. Proceedings., The Eleventh Annual International Workshop on
Conference_Location :
Heidelberg
Print_ISBN :
0-7803-4412-X
DOI :
10.1109/MEMSYS.1998.659776
