Title :
Electrical interconnect in MEMS/NEMS devices by Au/a-Si eutectic reaction
Author :
Huang, Xumin ; Zhao, D.Q. ; He, Jinwei ; Fan, X.J. ; Yang, Fei ; Zhang, David C.
Author_Institution :
Shenzhen Grad. Sch., Peking Univ., Shenzhen, China
Abstract :
The quality and the reliability of the electrical interconnection have a direct impact on the performance of the MEMS/NEMS devices. In this work, reliable electric interconnection for MEMS/NEMS devices was realized by Au/a-Si (amorphous Si) eutectic reaction in the anodic wafer bonding process. In order to evaluate the qualities of the anodic bonded contact, the electrical property of the Au/a-Si contact was characterized by a modified vertical Kelvin method. The resistor network model of the anodic bonded modified Kelvin structure indicates that the relationship between the contact resistance and the measured resistance can be easily established. The contact resistance was precisely measured by minimizing the interferences from parasitic resistances. The test results indicated that the anodic bonded Au/a-Si contact is Ohmic contact and the qualities of small-size bonded contact is greatly improved compared to that of traditional Au/Si contact. In addition, the fabrication process was also simplified by eliminating the high temperature annealing process after ion implantation.
Keywords :
amorphous semiconductors; contact resistance; elemental semiconductors; eutectic structure; gold; interconnections; micromechanical devices; nanoelectromechanical devices; ohmic contacts; silicon; wafer bonding; Au-Si; Au/a-Si contact; Au/a-Si eutectic reaction; MEMS device; NEMS device; amorphous silicon eutectic reaction; anodic bonded contact; anodic wafer bonding process; contact resistance; electrical interconnection; electrical property; high temperature annealing process; ion implantation; modified vertical Kelvin method; ohmic contact; parasitic resistance; resistor network model; Bonding; Contacts; Glass; Gold; Kelvin; Resistors; Silicon;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2013 13th IEEE Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-0675-8
DOI :
10.1109/NANO.2013.6721023