DocumentCode :
3019238
Title :
Comparison between front- and back-gating of Silicon Nanoribbons in real-time sensing experiments
Author :
Accastelli, E. ; Cappi, G. ; Buckley, Joseph ; Ernst, Thomas ; Guiducci, C.
Author_Institution :
Ecole Polytech. Fed. de Lausanne (EPFL), Lausanne, Switzerland
fYear :
2013
fDate :
5-8 Aug. 2013
Firstpage :
517
Lastpage :
520
Abstract :
Field-effect transistors (FETs) with open gate structures such as Silicon Nanoribbons (SiNRs) are promising candidates to become general platforms for ultrasensitive, label-free and real-time detection of biochemical interactions on surface. This work proposes and demonstrates the viability of a solution for integrating Ag/AgCl reference electrodes with the microfluidics. A comparison between different polarization schemes is carried out with an analysis of the respective advantages and disadvantages.
Keywords :
biosensors; electrochemical electrodes; elemental semiconductors; field effect transistors; microfluidics; nanoribbons; real-time systems; silicon; Ag-AgCl; Ag-AgCl reference electrodes; FET; Si; back-gating; biochemical interactions; field effect transistors; front-gating; label-free detection; microfluidics; open gate structures; real-time detection; real-time sensing; silicon nanoribbons; ultrasensitive detection; Interference; Logic gates; Microfluidics; Real-time systems; Sensors; Signal to noise ratio; Silicon; back-gating; front-gating; microfluidics; reference electrode; silicon nanoribbons;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology (IEEE-NANO), 2013 13th IEEE Conference on
Conference_Location :
Beijing
ISSN :
1944-9399
Print_ISBN :
978-1-4799-0675-8
Type :
conf
DOI :
10.1109/NANO.2013.6721024
Filename :
6721024
Link To Document :
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