DocumentCode
3019247
Title
Hybrid cache architecture replacing SRAM cache with future memory technology
Author
Lee, Suji ; Jung, Jongpil ; Kyung, Chong-Min
Author_Institution
Dept. of Electr. Eng., KAIST, Daejeon, South Korea
fYear
2012
fDate
20-23 May 2012
Firstpage
2481
Lastpage
2484
Abstract
Recently, hybrid cache architecture has become illuminated. As heterogeneous memory dies are stacked, it improves the performance of microprocessor enhanced in terms of power consumption and processing speed. This paper analyzed the hybrid cache architecture using different programs and memory types. SRAM is fixed for L1 cache memory, whereas DRAM, MRAM, and PRAM are the candidates for L2 cache memory. Each memory structure has the area satisfying the least Average Memory Access Time (AMAT) under a given area condition. Architecture composed of SRAM and MRAM shows 16.9% reduction in average memory access time and 15.2% of power reduction compared with that composed of homogeneous SRAM. Structure of SRAM and DRAM represents 33.0% reduction in power consumption, and that of SRAM and PRAM shows a potential to reduce area and power consumption due to their high density.
Keywords
DRAM chips; SRAM chips; cache storage; AMAT; DRAM; MRAM; PRAM; SRAM cache; average memory access time; heterogeneous memory dies; hybrid cache architecture; memory technology; microprocessor; power consumption; power reduction; Benchmark testing; Cache memory; Memory management; Phase change random access memory; Power demand;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
Conference_Location
Seoul
ISSN
0271-4302
Print_ISBN
978-1-4673-0218-0
Type
conf
DOI
10.1109/ISCAS.2012.6271803
Filename
6271803
Link To Document