Title :
Re-use of GaAs substrates for epitaxial lift-off III-V solar cells
Author :
Hageman, P.R. ; van Geelen, A. ; Thomeer, R.A.J. ; Giling, L.J.
Author_Institution :
Dept. of Exp. Solid State Phys., Nijmegen Univ., Netherlands
Abstract :
The epitaxial lift-off (ELO) method is in general considered to be very suitable for separation of the thin epilayer from its substrate. The used method is very gentle and hardly affects the substrate. We present further improvements on this method resulting in successful separation of crack free thin films as large as 2" substrates. Re-use of the substrates has been investigated with two dimensional optical step profiling to determine the roughness after the different surface cleaning procedures and after the ELO. Also the quality of epilayers after growing on used substrates is determined. In this paper it is demonstrated that substrates can be used several times without loss of epilayer quality
Keywords :
III-V semiconductors; gallium arsenide; materials preparation; semiconductor epitaxial layers; semiconductor growth; solar cells; substrates; surface cleaning; vapour phase epitaxial growth; GaAs; GaAs substrates re-use; III-V solar cells; crack free thin films; epitaxial lift-off; roughness determination; surface cleaning procedures; thin epilayer separation; two dimensional optical step profiling; Gallium arsenide; III-V semiconductor materials; Optical films; Photovoltaic cells; Rough surfaces; Substrates; Surface cleaning; Surface cracks; Surface roughness; Transistors;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520741
