Title :
The realisation of GaInP/GaAs power HBTs
Author :
Crouch, M.A. ; Hilton, K.P. ; Bourke, M.M. ; Hughes, B.T. ; Davis, R.G.
Author_Institution :
Defence Res. Agency, Malvern, UK
Abstract :
The GaAs based heterojunction bipolar transistor (HBT) continues to show improvements in power, efficiency and bandwidth making it very desirable for power amplifier applications. Among these are military phased array radar, secure communications, mobile phones, wireless networks and satellite communications. The foundation for the HBT is firmly rooted in its material base. The early candidate for HBT devices GaAlAs/GaAs has in many instances now been replaced by GaInP/GaAs due to its superior electrical and physical properties. While the inclusion of GaInP does offer numerous benefits for HBT devices it is comparatively immature and is not without its own difficulties. In this paper the technology and problems associated with the practical realisation of power HBT devices based on the material system GaInP/GaAs are discussed
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; military communication; mobile communication; phased array radar; power amplifiers; power bipolar transistors; satellite communication; GaInP-GaAs; III-V semiconductors; military phased array radar; mobile phones; power HBTs; power amplifier applications; satellite communications; secure communications; wireless networks; Bandwidth; Gallium arsenide; Heterojunction bipolar transistors; Military communication; Mobile communication; Mobile handsets; Phased arrays; Power amplifiers; Spaceborne radar; Wireless networks;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications Workshop, 1996. EDMO
Conference_Location :
Leeds
Print_ISBN :
0-7803-3130-3
DOI :
10.1109/EDMO.1996.575793
