DocumentCode :
3019425
Title :
Designing memristors: Physics, materials science and engineering
Author :
Ribeiro, Gilberto Medeiros ; Yang, J. Joshua ; Nickel, Janice ; Torrezan, Antonio ; Strachan, John Paul ; Williams, R.Stanley
Author_Institution :
Nanoelectron. Res. group, Hewlett-Packard Labs., Palo Alto, CA, USA
fYear :
2012
fDate :
20-23 May 2012
Firstpage :
2513
Lastpage :
2516
Abstract :
Recently, memory and storage have taken a front seat in computer hardware as it experiences an explosive growth at a rate faster than Moore´s law for the past 10 years. With the upcoming challenges for further FLASH scaling into the next generations, emerging technologies have appeared portraying perspectives with the potential to shift computer architecture concepts. Here we present a brief overview and progress in our quest to create a device with competitive attributes, with the ultimate goal of achieving a universal, non-volatile data storage solution.
Keywords :
computer architecture; flash memories; memristors; random-access storage; FLASH scaling; Moore´s law; computer architecture; computer hardware; memristors; nonvolatile data storage solution; universal data storage solution; Materials; Memristors; Nanotechnology; Phase change random access memory; Resistance; Switches; Switching circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
Conference_Location :
Seoul
ISSN :
0271-4302
Print_ISBN :
978-1-4673-0218-0
Type :
conf
DOI :
10.1109/ISCAS.2012.6271813
Filename :
6271813
Link To Document :
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