Title :
Designing memristors: Physics, materials science and engineering
Author :
Ribeiro, Gilberto Medeiros ; Yang, J. Joshua ; Nickel, Janice ; Torrezan, Antonio ; Strachan, John Paul ; Williams, R.Stanley
Author_Institution :
Nanoelectron. Res. group, Hewlett-Packard Labs., Palo Alto, CA, USA
Abstract :
Recently, memory and storage have taken a front seat in computer hardware as it experiences an explosive growth at a rate faster than Moore´s law for the past 10 years. With the upcoming challenges for further FLASH scaling into the next generations, emerging technologies have appeared portraying perspectives with the potential to shift computer architecture concepts. Here we present a brief overview and progress in our quest to create a device with competitive attributes, with the ultimate goal of achieving a universal, non-volatile data storage solution.
Keywords :
computer architecture; flash memories; memristors; random-access storage; FLASH scaling; Moore´s law; computer architecture; computer hardware; memristors; nonvolatile data storage solution; universal data storage solution; Materials; Memristors; Nanotechnology; Phase change random access memory; Resistance; Switches; Switching circuits;
Conference_Titel :
Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
Conference_Location :
Seoul
Print_ISBN :
978-1-4673-0218-0
DOI :
10.1109/ISCAS.2012.6271813