Title :
Design and measurement of MEMS capacitive ultrasonic transducer
Author :
Jing Miao ; Wenjiang Shen ; Muyu Chen ; Hui Wang ; Changde He ; Chenyang Xue ; Jijun Xiong
Author_Institution :
Nat. Key Lab. for Electron. Meas. Technol., North Univ. of China, Taiyuan, China
Abstract :
Since the proposing of capacitive micromachined ultrasonic transducer by Khuri Yakub group in 1994 that this kind of transducer occupying the advantages of wide bandwidth, impedance matching well with the propagation medium especially in fluid and air and high sensitivity, has shown a great potential for a wide range of applications such as medical imaging, medical ultrasound diagnosis, therapy and underwater ultrasonic imaging. This paper presents a kind of MEMS capacitive ultrasonic transducer with the novel cavities embedded in the device layer of Silicon On Insulator. Firstly, the geometric dimensions are derived from the theoretical analysis of the vibrating membrane and the electrical analysis of the transducer. Secondly, Finite Element Analysis is adopted to confirm the operation mode and the deflection and equivalent stress under operation/collapse voltage are obtained. Then, the fabrication process is depicted and the fabricated transducer is shown. The test results show that the electromechanical coupling coefficient is 69.65%.
Keywords :
capacitive transducers; finite element analysis; microsensors; silicon-on-insulator; ultrasonic transducers; MEMS capacitive ultrasonic transducer; capacitive micromachined ultrasonic transducer; deflection; electrical analysis; electromechanical coupling coefficient; equivalent stress; fabrication process; finite element analysis; geometric dimensions; operation mode; propagation medium; silicon on insulator; vibrating membrane; Acoustics; Cavity resonators; Electrodes; Micromechanical devices; Resonant frequency; Transducers; Ultrasonic transducers; Capacitive Ultrasonic Transducer; FEA; MEMS; SOI; embedded cavities;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2015 IEEE 10th International Conference on
Conference_Location :
Xi´an
DOI :
10.1109/NEMS.2015.7147501