Title :
Transparent ohmic contacts to epitaxial InP cells
Author :
Taylor, S.J. ; Leycuras, A. ; Beaumont, B. ; Coutal, C. ; Roustan, J.C. ; Azema, A.
Author_Institution :
CNRS, Valbonne, France
Abstract :
In this paper we report the deposition of transparent ohmic contacts of indium tin oxide by laser ablation to homoepitaxial InP cells. This method provides technologically simple, low resistance contacts at low deposition temperatures and should not damage the junction of shallow emitter n+/p structures that are required due to the high surface recombination velocity of InP
Keywords :
III-V semiconductors; indium compounds; ohmic contacts; pulsed laser deposition; semiconductor epitaxial layers; semiconductor materials; solar cells; ITO; InP; InSnO; high surface recombination velocity; homoepitaxial InP cells; indium tin oxide; laser ablation; low deposition temperatures; low resistance contacts; shallow emitter n+/p structures; transparent ohmic contacts; Contact resistance; Costs; Indium phosphide; Indium tin oxide; Laser ablation; Ohmic contacts; Optical losses; Surface emitting lasers; Surface resistance; Temperature;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520742
