DocumentCode
3019554
Title
An ultra low power, low voltage CMOS squarer circuit for non-coherent IR-UWB receivers
Author
Parvizi, Mahdi ; Allidina, Karim ; El-Gamal, Mourad N.
Author_Institution
Dept. of Electr. & Comput. Eng., McGill Univ., Montreal, QC, Canada
fYear
2012
fDate
20-23 May 2012
Firstpage
2533
Lastpage
2536
Abstract
This paper presents an ultra low power, low voltage, high gain squarer circuit for use in non-coherent impulse radio ultra wideband (IR-UWB) receivers. The proposed squaring function is implemented based on the intrinsic CMOS transistor characteristics in the sub-threshold region, where the second-order derivative of the drain current is maximized. Additionally, a capacitor cross-coupling gm boosting technique is exploited to increase the conversion gain of the squarer. Utilizing the aforementioned schemes, a low power and high gain squarer is realized in a TSMC 90nm CMOS technology. Simulation results demonstrate that the proposed squarer covers the UWB bandwidth and provides 16dB of RMS conversion gain at the input signal level of 100mV, while drawing only 320μA from a 0.5V power supply.
Keywords
CMOS integrated circuits; low-power electronics; ultra wideband communication; capacitor cross-coupling boosting technique; current 320 muA; drain current; high gain squarer; impulse radio ultra wideband receiver; intrinsic CMOS transistor; low power squarer; low voltage CMOS squarer circuit; low voltage squarer circuit; noncoherent IR-UWB receiver; size 90 nm; squaring function; ultra low power CMOS squarer circuit; voltage 0.5 V; voltage 100 mV; CMOS integrated circuits; CMOS technology; Gain; MOSFETs; Power demand; Receivers; IR-UWB; non-coherent detection; squarer circuit; subthreshold region;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
Conference_Location
Seoul
ISSN
0271-4302
Print_ISBN
978-1-4673-0218-0
Type
conf
DOI
10.1109/ISCAS.2012.6271819
Filename
6271819
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