Title :
High performance InGaP/GaAs HBTs with AlGaAs/InGaP emitter passivated ledges for reliable power applications
Author :
Chen, W.L. ; Kim, T.S. ; Chau, H.F. ; Henderson, T.
Author_Institution :
Corp. R&D, Texas Instrum. Inc., Dallas, TX, USA
Abstract :
High performance InGaP/GaAs HBTs have been demonstrated with novel AlGaAs/InGaP emitter passivated ledges on the extrinsic base region to achieve good device reliability. Using this technology, our X-band HBTs fabricated have been under stress test for ~2500 hours with an initial junction temperature of 200°C and a Jc of 50 KA/cm2 and there is only ~5% degradation observed with no early catastrophic failure. In terms of power performance, our X-band HBT power amplifiers achieved typical output power of 1.32 W CW (4.42 W/mm), 60% power added efficiency, 70.6% collector efficiency and 8.18 dB associated gain at 10 GHz
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; life testing; microwave bipolar transistors; microwave power amplifiers; microwave power transistors; passivation; power bipolar transistors; semiconductor device reliability; semiconductor device testing; 1.32 W; 10 GHz; 200 degC; 2500 h; 60 percent; 70.6 percent; 8.18 dB; AlGaAs-InGaP; AlGaAs/InGaP emitter passivated ledges; CW; InGaP-GaAs; X-band HBT; X-band HBT power amplifier; collector efficiency; degradation; extrinsic base region; gain; good device reliability; high performance InGaP/GaAs HBT; initial junction temperature; output power; power added efficiency; power performance; reliable power applications; stress test; Annealing; Contact resistance; Gallium arsenide; Gold; Heterojunction bipolar transistors; Passivation; Power amplifiers; Power system reliability; Temperature; Testing;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600158
